Sub-100 mA current operation of strained InGaAs quantum well lasers at low temperatures
نویسندگان
چکیده
Very low threshold currents ~,100 mA! have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 mA and external quantum efficiency ;1 mW/mA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures ~,100 K! in comparison to that at room temperature. These results are relevant to the prospect of integration of semiconductor lasers with low temperature electronics for high performance © 1994 American Institute of Physics.
منابع مشابه
Submilliamp Threshold InGaAs-GaAs Strained Layer Quantum-Well Laser
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